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1 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 1. product overview 1.1 general description abu 2 51 8 , a wide - band linear push - pull amplifier mmic, has high linearity and low noise over a wide range of 5 ~ 1400 mhz, being suitable to low return lo ss in the reverse (5 ~ 300 mhz) and flat gain in the forward path (50 ~ 1400 mhz) in the fiber receiver, distribution amplifiers and drop amplifiers of catv. the gain slope is adjustable with the off - chip feedback circuit components. the amplifier is avail able in a n so ic 8 package and passes through the stringent 100% dc & rf test in an automated test handler. 1.2 features ? low - noise a nd high linearity ? wi de - band catv application at 5 ~ 14 00 mhz ? 75 ?? input & output matching ? robust under h ard o peration c ond itions ? 20.3 db gain at 50 mhz ? cso of 71 dbc, ctb of 60 dbc @ pout = 103 db ? v flat for ntsc 77 channels , d evice voltage = +5 v ? single supply: +5 v 1.3 applications ? catv reverse at 5 ~ 300 mhz ? catv forward at 50 ~ 1400 mhz ? hfc nodes , head - e nd equipme nt 1.4 package profile & rohs compliance soic8 , 6.0 x4. 8 mm 2 , surface mount rohs - compliant ab u 251 8 data sheet 5 ~ 14 00 mhz catv push - pull amplifier mmic
2 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 2. summary on product performances 2.1 typical performance supply voltage = + 5 v, t a = +25 ? c, z o = 7 5 ?? ? parameter typical unit frequency 5 50 300 mhz noise figure 3.6 2.2 2. 2 db gain 20.0 20.3 20.1 db s11 - 20 - 20 - 20 db s22 - 18 - 20 - 19 db output ip3 40 1) 42 2) 41 2) db m output ip2 3) 64 71 69 dbm output p1db 25 26 26 dbm cso 71 4 ) dbc ctb 60 4 ) dbc current 275 ma device voltage +5 v 1) oip3 is measured with two t ones at an output power of + 10 dbm/tone separated by 1 mhz. 2 ) oip3 is measured with two tones at an output power of + 10 dbm/tone separated by 6 mhz. 3 ) oip2 is measured with two tones at an output power of + 10 dbm/ tone separated by 6 mhz . 4 ) cso & ctb mea sured at pout = 103 db ? v flat for ntsc 77 channels. 2.2 product specification supply voltage = + 5 v, t a = +25 ? c, z o = 7 5 ?? ? parameter min typ max unit frequency 50 mhz noise figure 2.2 db gain 19.3 20.3 21.3 db s11 - 20 db s22 - 20 db output ip 3 1) 42 dbm output ip2 2) 71 dbm output p1db 26 dbm current 235 275 315 ma device voltage +5 v 1) oip3 is measured with two tones at an output power of + 10 dbm/tone separated by 6 mhz. 2) oip2 is measured with two tones at an output power of + 10 dbm/ tone separated by 6 mhz .
3 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 2.3 pin configuration pin description simplified outline 1 ,4 rf_in 2, 3, 6, 7 nc or gnd 5, 8 rf_out & bias 2.4 absolute maximum ratings , t a = +25 ? c parameters max. ratings operating case temperature - 40 to ? 85 ? c stora ge temperature - 40 to ? 150 ? c device voltage +6 v device current 36 0 ma power dissipation +1.8 w junction temperature +150 ? c input rf power (cw, 75 ? matched) +2 6 dbm note: operation of this device in excess of any of these limits may cause permanen t damage. 2.5 thermal resistance symbol description typ unit r th thermal resistance from junction to lead 32 ? c/w 2.6 esd classification & moisture sensitivity level esd clas sification hbm class 1a caution: gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. moisture sensitivity level m sl 3 at 260 ? c reflow (intentionally blanked) 1 2 3 4 5 6 7 8
4 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. e b - s8 - h8 3. application : 5 ~ 3 00 mhz (v device = +5 v) 3.1 application circuit & evaluation board bill of material symbol value size description manufacturer ab u 2518 - - mmic amplifier asb c1, c2, c3, c4 , c5, c6 1 ? f 0603 dc block ing capacitor murata c 7, c8 1 ? f 0603 fee dback capacitor murata c9, c10 10 ? f 08 05 decoupling capacitor murata c 11 , c 12 1. 5 pf 0603 matching capacitor murata c 13 1.2 pf 0603 matching capacitor murata l1, l2 22 ? h 1206 rf choke inductor murata r1, r2 510 ? ? 0603 feedback resistor samsung t1, t2 1:1 - transformer balun macom c1 c5 c9 c2 c6 c10 t1_maba_007159 t2_maba_007159 c13 c11 c12 l1 l2 c7 r1 c8 r2 c3 c4 ABU2518 rf in vdevice = +5 v vdevice = +5 v rf out
5 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 3.2 performance table supply voltage = + 5 v, t a = +25 ? c, z o = 7 5 ?? ? parameter typical unit frequency 5 5 0 300 mhz noise figure 3.6 2.2 2. 2 db gain 20.0 20.3 20.1 db s11 - 20 - 20 - 20 db s22 - 18 - 20 - 19 db output ip3 40 1) 42 2) 41 2) dbm output ip2 3 ) 64 71 69 dbm output p1db 25 26 26 dbm cso 71 4 ) dbc ctb 60 4 ) dbc current 257 ma device voltage +5 v 1) oip3 is measured with two tones at an output powe r of +10 dbm/tone separated by 1 mhz . 2 ) oip3 is measured with two ton es at an output power of +10 dbm/tone separated by 6 mhz. 3 ) oip2 is measured with two tones at an output power of +10 dbm/ tone separated by 6 mhz . 4 ) cso & ctb measured at pout = 10 3 db ? v flat for ntsc 77 channels. *note : pout is 105 db ? v @ flat ch . and 108 db ? v @ 9 db tilt for cenelec 42 ch . at cso, ctb > 60 dbc. 3.3 plot of s - parameter & stability factor 0 50 100 150 200 250 300 frequency (mhz) -60 -50 -40 -30 -20 -10 0 10 20 30 40 s-parameter (db) 0 1 2 3 4 5 6 7 8 9 10 stability factor, k s21 s12 s11 s22 k
6 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 3.4 plots of noise figure and performances with temperature -60 -40 -20 0 20 40 60 80 100 temperature (c) 18 19 20 21 22 23 gain (db) frequency = 50 mhz -60 -40 -20 0 20 40 60 80 100 temperature (c) 240 250 260 270 280 current (ma) 0 50 100 150 200 250 300 frequency (mhz) -40 -30 -20 -10 0 s22 (db) -40 c +25 c +85 c 0 50 100 150 200 250 300 frequency (mhz) -30 -20 -10 0 s11 (db) -40 c +25 c +85 c 0 50 100 150 200 250 300 frequency (mhz) 0 5 10 15 20 25 gain (db) -40 c +25 c +85 c 0 50 100 150 200 250 300 frequency (mhz) 0 1 2 3 4 5 6 nf (db) -40 c +25 c +85 c
7 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - s8 - h8 4. application : 5 0 ~ 12 00 mhz (v device = + 5 v) 4.1 application circuit & evaluation board bill of material symbol value size description manufacturer ab u 2518 - - mmic amplifier asb c1, c2, c3, c4 1 n f 0 603 dc block ing capacitor murata c 5 , c 6 1 0 n f 0603 feedback capacitor murata c 7 , c 8 10 ? f 08 05 decoupling capacitor murata c 9 , c 1 0 1. 5 pf 0603 matching capacitor murata c 1 1 1.5 pf 0603 matching capacitor murata l1, l2 1 ? h 1206 rf choke inductor murata l3, l4 2.7 nh 0603 matching induc tor murata r1, r2 430 ? ? 0603 feedback resistor samsu ng t1, t2 1:1 - transformer balun macom c1 c3 c7 c2 c4 c8 t1_maba_007159 t2_maba_007159 c11 c9 c10 l1 l2 c5 r1 c6 r2 l3 l4 ABU2518 rf in vdevice = +5 v vdevice = +5 v rf out
8 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 4.2 performance table supply voltage = + 5 v, t a = +25 ? c, z o = 75 ?? ? parameter typical unit frequency 5 0 50 0 1200 mhz noise figure 2.4 2.5 2. 7 db gain 19.3 19 . 2 18 . 7 db s11 - 16 - 19 - 18 db s22 - 1 8 - 17 - 1 6 db outp ut ip3 1) 4 2 41 39 dbm output ip2 2 ) 63 dbm output p1db 2 6 2 6 2 5 dbm cso 7 1 3 ) dbc ctb 60 3 ) dbc current 275 ma device voltage +5 v 1) oip3 is measured with two tones at an output power of +10 dbm/tone separated by 6 mhz. 2 ) oip2 is measured with two to nes(f1 = 400 mhz + f2 = 450 mhz ) at an output power of +10 dbm/ tone. 3 ) cso & ctb measured at pout = 10 3 db ? v flat for ntsc 77 channels. *note : pout is 105 db ? v @ flat ch . and 108 db ? v @ 9 db tilt for cenelec 42 ch . at cso, ctb > 60 dbc. 4.3 plot of s - parameter & stability factor 0 200 400 600 800 1000 1200 frequency (mhz) -60 -50 -40 -30 -20 -10 0 10 20 30 40 s-parameter (db) 0 1 2 3 4 5 6 7 8 9 10 stability factor, k s21 s12 s11 s22 k
9 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - s8 - h8 5. application : 5 0 ~ 14 00 mhz (v device = + 5 v) 5.1 application c ircuit & evaluation board bill of material symbol value size description manufacturer ab u2518 - - mmic amplifier asb c1, c2, c3, c4 1 n f 0603 dc block ing capacitor murata c 5, c6 1 0 n f 0603 feedbac k capacitor murata c 7 , c 8 10 ? f 08 05 decoupling capacitor murata c 9 , c 10 1. 8 pf 0603 matching capacitor murata c 11 1.5 pf 0603 matching capacitor murata l1, l2 1 ? h 1206 rf choke inductor murata l3, l4 2.7 nh 0603 matching induc tor murata r1, r2 430 ? ? 0603 feedback resistor samsung t1, t2 1:1 - transformer balun macom c1 c3 c7 c2 c4 c8 t1_maba_007159 t2_maba_007159 c11 c9 c10 l1 l2 c5 r1 c6 r2 l3 l4 ABU2518 rf in vdevice = +5 v vdevice = +5 v rf out
10 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 5.2 performance table supply voltage = + 5 v, t a = +25 ? c, z o = 75 ?? ? parameter typical unit frequency 5 0 50 0 1200 1400 mhz noise figure 2.4 2.5 2.7 3.3 db gain 19.2 19 . 1 18 . 8 18.7 db s11 - 15 - 18 - 15 - 17 db s22 - 1 6 - 15 - 20 - 16 db output ip3 1) 42 42 41 40 dbm output ip2 2 ) 63 dbm output p1db 26 26 25 25 dbm current 275 ma device voltage +5 v 1) oip3 is measured with two tones at an output power of +10 dbm/tone separated by 6 mhz. 2 ) oip2 is measured with two tones(f1 = 400 mhz + f2 = 450 mhz ) at an output power of +10 dbm/ tone. 5.3 plot of s - parameter & stability factor 0 200 400 600 800 1000 1200 frequency (mhz) -60 -50 -40 -30 -20 -10 0 10 20 30 40 s-parameter (db) 0 1 2 3 4 5 6 7 8 9 10 stability factor, k s21 s12 s11 s22 k
11 / 12 asb inc. ? sales@asb .co.kr septem ber 201 7 ab u 251 8 6. package outline (so ic8 ) \ 7. surface mount recommendation (in mm) symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 a1 0.00 --- 0.10 a2 --- 1.45 --- b 0.33 --- 0.51 c 0.19 --- 0.25 d 4.80 --- 5.00 d2 3.20 3.30 3.40 e 5.80 6. 0 0 6.20 e1 3.80 3.90 4.00 e2 2.30 2.40 2.50 e --- 1.27 --- l 0.40 --- 1.27 y --- --- 0.10 ? 0 ? --- 8 ? ? l 1 - l1 ? ? --- --- 0.12 l1 1.04ref n ote 1. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 2. to ensure reliable operation, device ground paddle - to - ground pad soldering is critical. 3. add mounting screws near the part to fasten the board to a heat sinker. ensure that the ground & thermal via region contacts the heat sinker. 4. a proper heat dissipation path underneath the area of the pcb for the mounted device is strictly required for proper thermal operation. damage to the device can result from ina ppropriate heat dissipation. le is rf and dc ground. a b u 2518 part no.
12 / 12 asb inc. ? sales@asb .co.kr september 201 7 ab u 2 518 8. recommended soldering reflow profile (end of datasheet) copyright ? 201 7 asb inc. all rights reserved. specifications subject to change without notice. asb assumes no responsibility fo r any errors which may appear in this datasheet. no part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of asb. 20~40 sec 260 ? c 200 ? c 150 ? c 60~180 sec ramp - up (3 ? c/sec) ramp - down (6 ? c/sec)

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